FTIR Spectroscopy Characterization of Si-C bonding in SiC Thin Film prepared at Room Temperature by Conventional 13.56MHz RF PECVD
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چکیده
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ژورنال
عنوان ژورنال: Malaysian Journal of Fundamental and Applied Sciences
سال: 2012
ISSN: 2289-599X,2289-5981
DOI: 10.11113/mjfas.v8n4.156